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皇冠手机登录地址3 Effect of annealing on the damage threshold and optical properties of HfO2/Ta2O5/SiO2 high-reflection film

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Abstract

The effect of thermal annealing on the optical properties, microstructure, and laser-induced damage threshold (LIDT) of HfO2/Ta2O5/SiO2 HR films has been investigated. The transmission spectra shift to a short wavelength and the X-ray diffraction peaks of monoclinic structure HfO2 are enhanced after thermal annealing. The calculated results of the m(?111) diffraction peak show that the HfO2 grain size is increased, which is conducive to increasing the thermal conductivity. Thermal annealing also reduces the laser absorption of high-reflection films. The improvement of thermal conductivity and the decrease of laser absorption both contribute to the improvement of LIDT. The experimental results show that the highest LIDT of 22.4 J/cm2 is obtained at 300°C annealing temperature. With the further increase of annealing temperature, the damage changes from thermal stress damage to thermal explosion damage, resulting in the decrease of LIDT.

Newport宣传-MKS新实验室计划
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所属栏目:Thin films

基金项目:This work was supported by the Jilin Science and Technology Development Plan (Nos. 20180519018JH and 20190302052GX), the Jilin Education Department “135” Science and Technology (No. JJKH20190543KJ), the National Natural Science Foundation of China (No. 11474038), and the Excellent Youth Foundation of Jilin Province (No. 20180520194JH).

收稿日期:2019-05-07

录用日期:2019-07-05

网络出版日期:2019-09-12

作者单位    点击查看

Jianing Dong:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Jie Fan:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Sida Mao:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Yunping Lan:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Yonggang Zou:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Haizhu Wang:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Jiabin Zhang:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
Xiaohui Ma:State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

联系人作者:Jie Fan(fanjie@cust.edu.cn)

备注:This work was supported by the Jilin Science and Technology Development Plan (Nos. 20180519018JH and 20190302052GX), the Jilin Education Department “135” Science and Technology (No. JJKH20190543KJ), the National Natural Science Foundation of China (No. 11474038), and the Excellent Youth Foundation of Jilin Province (No. 20180520194JH).

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引用该论文

Jianing Dong,  Jie Fan,  Sida Mao,  Yunping Lan,  Yonggang Zou,  Haizhu Wang,  Jiabin Zhang,  Xiaohui Ma, "Effect of annealing on the damage threshold and optical properties of HfO2/Ta2O5/SiO2 high-reflection film," Chinese Optics Letters 17(11), 113101 (2019)

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